5SHY3545L0016 3BHB020720T0002 IGBT semiconductor switching device
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The IGCT combines the high-speed switching characteristics of the IGBT (insulated gate bipolar transistor) with the high blocking voltage and low on-loss characteristics of the GTO (gate shutdown gate tube), and the trigger signal is generally transmitted to the IGCT unit through the optical fiber. In the phase module of the ACS6000 marginal rectifier unit, each phase module consists of an IGCT, a diode, and a clamp capacitor, and is powered by an independent gate power supply unit GUSP.
-Brand: ABB
-Model Name:5SHY3545L0016 3BHB020720T0002 3BHE019719R0101 GVC736BE101
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